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| PRELIMINARY DATA JUN. 2000 PHOTOMULTIPLIER TUBE R7639 Quantum Efficiency: 40 % at 155 nm High Sensitivity Solar Blind Photocathode (115 nm to 230 nm) 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES Spectral Response ..................... 115 nm to 230 nm Cathode Sensitivity Radiant at 155 nm ......................... 50 mA/W Typ. Quantum Efficiency at 155 nm ..................... 40 % Anode Sensitivity (at 1000 V) Radiant at 155 nm ................... 1.5 x 105 A/W Typ. APPLICATIONS Emission Spectroscopy VUV Spectrophotometer TPMSF0083 GENERAL Parameter Spectral Response Wavelength of Maximum Response Photocathode Material Minimum Effective Area Window Material Dynode Secondary Emitting Surface Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base Weight Suitable Socket Description/Value 115 to 230 155 Diamond 3 x 12 MgF2 Sb-Cs Circular-cage 9 4 6 11-pin base JEDEC No.B11-88 45 E678-11A(option) Unit nm nm -- mm -- -- -- -- pF pF Figure 1: Typical Spectral Response TPMSB0172EB 100 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY 10 QUANTUM EFFICIENCY 1 g -- 0.1 100 120 140 160 180 200 220 240 260 280 300 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2000 Hamamatsu Photonics K.K PHOTOMULTIPLIER TUBE R7639 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Between Successive Dynodes Between First Dynode and Cathode Average Anode Current Ambient Temperature Rating 1250 250 250 250 0.1 -30 to +50 Unit V dc V dc V dc V dc mA C CHARACTERISTICS (at 25C) Parameter Cathode sensitivity Quantum Efficiency at 121.6 nm at 155 nm Radiant at 121.6 nm at 155 nm Anode Sensitivity Radiant at 155 nm Gain Anode Dark Current (After 30 minutes storage in the darkness) 10 -- 10 -- 26 40 26 50 -- -- -- -- -- -- 5 -16 Min. Typ. Max. Unit % % mA/W mA/W A/W -- nA W ns ns ns 1.0 x 104 1.5 x 105 -- -- -- 3.0 x 10 0.5 1.46 x 10 2.2 22 1.2 6 ENI (Equivalent Noise Input) Time Response Anode Pulse Rise Time Electron Transit Time Transit Time Spread (TTS) Anode Current Stability Light Hysteresis Voltage Hysteresis -- -- -- -- -- -- -- -- -- 0.1 1.0 -- -- % % NOTES : Averaged over any interval of 30 seconds maximum. : Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. : The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. : Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. : Hysteresis is temporary instability in anode current after light and voltage are applied. Table 1: Voltage Distribution Ratio Electrode K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P 1 1 1 1 1 Distribution 11111 Ratio Supply Voltage=1000 V dc K: Cathode Dy: Dynode P: Anode : Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. : ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. 2q*ldb*G*f S where q = Electronic charge (1.60 x 10-19 coulomb). ldb = Anode dark current(after 30 minutes storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. : The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. ENI = ANODE CURRENT li l max. l min. TIME 0 5 6 7 (minutes) TPMSB0002EA l max -- l min. Hysteresis = x 100 (%) li (1) Light Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2) Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 microampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is reilluminated for a minute to measure the variation. Figure 2:Typical Gain and Anode Radiant Sensitivity TPMSB0173EB Figure 3:Typical Time Response TPMSB0004EB 108 108 100 80 60 ANODE RADIANT SENSITIVITY (A/IW) at 155mm 107 TYPICAL GAIN 107 40 TRAN SIT T IME 106 106 20 105 TYPICAL ANODE 105 SENSITIVITY TIME (ns) GAIN 10 8 6 104 104 4 RISE TIME 103 MINIMUM ANODE SENSITIVITY 102 500 103 2 700 1000 102 1500 1 300 500 700 1000 1500 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure 4:Dimensional Outline and Basing Diagram (Unit: mm) Figure 5:Socket E678-11A (Option) (Unit: mm) 49 38 20 MAX. FACE PLATE 28.5 1.5 3 MIN. MgF2 WINDOW DY6 6 20 MAX. 5 DY5 5 7 DY7 8 DY8 9 DY9 10 P K 12 MIN. DY4 4 29 80 MAX. 94 MAX. 49.0 2.5 DY2 2 1 11 PHOTOCATHODE DY1 DIRECTION OF LIGHT TACCA0064EA 32.2 0.5 11 PIN BASE JEDEC No. B11-88 TPMSA0040EA NOTE: There is a 2 mm diameter hole to exhaust inner air on the plastic base. 18 4 DY3 3 3.5 33 PHOTOMULTIPLIER TUBE R7639 Warning--Personal Safety Hazards Electrical Shock--Operating voltages applies to this device present a shock hazard. HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: france@hamamatsu.com United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMS1058E03 JUN. 2000 IP Printed in Japan (1,000) |
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